Measurement of the hysteretic thermal properties of W-doped and undoped nanocrystalline powders of VO2.

Hysteresis loops exhibited by the thermal properties of undoped and 0.8 at.% W-doped nanocrystalline powders of VO2 synthesized by means of the solution combustion method and compacted in pellets, are experimentally measured by photothermal radiometry. It is shown that: (i) the W doping reduces both the hysteresis loops of VO2 and its transition temperature up to 15 °C. (ii) The thermal diffusivity decreases (increases) until (after) the metallic domains become dominant in the VO2 insulating matrix, such that its variation across the metal-insulation transition is enhanced by 23.5% with W-0.8 at.% doping. By contrast, thermal conductivity (thermal effusivity) increases up to 45% (40%) as the metallic phase emerges in the VO2 structure due to the insulator-to-metal transition, and it enhances up to 11% (25%) in the insulator state when the local rutile phase is induced by the tungsten doping. (iii) The characteristic peak of the VO2 specific heat capacity is observed in both heating and cooling processes, such that the phase transition of the 0.8 at.% W-doped sample requires about 24% less thermal energy than the undoped one. (iv) The impact of the W doping on the four above-mentioned thermal properties of VO2 mainly shows up in its insulator phase, as a result of the distortion of the local lattice induced by the electrons of tungsten. W doping at 0.8 at.% thus enhances the VO2 capability to transport heat but diminishes its thermal switching efficiency.

Thermal hysteresis measurement of the VO2 emissivity and its application in thermal rectification.

Hysteresis loops in the emissivity of VO2 thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO2 films, within their insulator-to-metal and metal-to-insulator transitions. It is shown that: i) The principal hysteresis width (maximum slope) in the VO2 emissivity of the VO2 + silicon sample is around 3 times higher (lower) than the corresponding one of the VO2 + sapphire sample. VO2 synthesized on silicon thus exhibits a wider principal hysteresis loop with slower MIT than VO2 on sapphire, as a result of the significant differences on the VO2 film microstructures induced by the silicon or sapphire substrates. ii) The hysteresis width along with the rate of change of the VO2 emissivity in a VO2 + substrate sample can be tuned with its secondary hysteresis loop. iii) VO2 samples can be used to build a radiative thermal diode able to operate with a rectification factor as high as 87%, when the temperature difference of its two terminals is around 17 °C. This record-breaking rectification constitutes the highest one reported in literature, for a relatively small temperature change of diode terminals.

Simple far-field radiative thermal rectifier using Fabry-Perot cavities based infrared selective emitters.

We present a thermal rectification device concept based on far-field radiative exchange between two selective emitters. Rectification is achieved due to a large contrast between the two selective emitters' thermo-optical properties. A simple device constituted by two multilayer samples made of metallic (Au) and semiconductor (Si and HDSi) thin films is proposed. This device shows a rectification ratio increasing with temperature up to 19% for a temperature difference of ΔT=370 K. Further optimization would allow larger rectification values. The presented results might be useful for energy conversion devices, engineering of smart radiative coolers/insulators, and development of thermal logical circuits.

Nanoscale heat flux between nanoporous materials.

By combining stochastic electrodynamics and the Maxwell-Garnett description for effective media we study the radiative heat transfer between two nanoporous materials. We show that the heat flux can be significantly enhanced by air inclusions, which we explain by: (a) the presence of additional surface waves that give rise to supplementary channels for heat transfer throughout the gap, (b) an increase in the contribution given by the ordinary surface waves at resonance, (c) and the appearance of frustrated modes over a broad spectral range. We generalize the known expression for the nanoscale heat flux for anisotropic metamaterials.

Resonant infrared transmission through SiC films.

Resonant transmission through metallic films is observed when a periodic array of holes is drilled. This phenomenon has been attributed to surface plasmon polaritons. We study a similar system made of an array of slits in a SiC film supporting surface phonon polaritons. We find a resonant transmission in the infrared. The role of surface waves is analyzed. We find that surface waves are excited at resonance but are not a necessary condition to obtain a resonant transmission.

Comment on Radiative transfer over small distances from a heated metal.

We show that there is no contradiction between the results presented by Pan [Opt. Lett. 25, 369 (2000)] and the 1/L(2) dependence of the radiative energy flux between two half-spaces separated by a small vacuum gap of width L obtained by Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)] and by Loomis and Maris [Phys. Rev. B 50, 18517 (1994)].

Near-field spectral effects due to electromagnetic surface excitations

We demonstrate theoretically that the spectra of electromagnetic emission of surface systems can display remarkable differences in the near and the far zones. The spectral changes occur due to the loss of evanescent modes and are especially pronounced for systems which support surface waves.